Engineering Answers

Consider a short n-channel MOSFET with Toxe = 2 nm and WT = 35 nm. Suppose 

the threshold voltage (VT) for this device is simply defined to be the value of VGS at 

which the normalized drain current IDS/(W/L) reaches 100 nA for VDS = 100 mV. 

(1) Determine the subthreshold swing, S. 

(2) If the normalized leakage current must be less than or equal to 10 pA when VGS

= 0 V and VDS = 100 mV, what is the minimum threshold voltage this device can 

have? 

(3) Why is a small value of S desirable?

What is the aspect ratio of channel width to length of n-MOS transistor for the 

following parameters: gm = 1.2 mA/V, VT = 0.5 V, VGS = 2 V, VDS = 1 V, kn = 120 

μA/V2.

f(x,y)=cxy,for x=1,2,3;y=1,2,3

Consider the function y= 2x/x^2-4 draw the asymptote lines into the graoh and indicate the axies values and orientation.