Answer to Question #283312 in Electrical Engineering for MD HUMAYAN KABIR

Question #283312

Consider a short n-channel MOSFET with Toxe = 2 nm and WT = 35 nm. Suppose 

the threshold voltage (VT) for this device is simply defined to be the value of VGS at 

which the normalized drain current IDS/(W/L) reaches 100 nA for VDS = 100 mV. 

(1) Determine the subthreshold swing, S. 

(2) If the normalized leakage current must be less than or equal to 10 pA when VGS

= 0 V and VDS = 100 mV, what is the minimum threshold voltage this device can 

have? 

(3) Why is a small value of S desirable?


0
Service report
It's been a while since this question is posted here. Still, the answer hasn't been got. Consider converting this question to a fully qualified assignment, and we will try to assist. Please click the link below to proceed: Submit order

Need a fast expert's response?

Submit order

and get a quick answer at the best price

for any assignment or question with DETAILED EXPLANATIONS!

Comments

No comments. Be the first!

Leave a comment

LATEST TUTORIALS
New on Blog
APPROVED BY CLIENTS