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{"ops":[{"insert":"Consider a short n-channel MOSFET with Toxe = 2 nm and WT = 35 nm. Suppose\u00a0\nthe threshold voltage (VT) for this device is simply defined to be the value of VGS at\u00a0\nwhich the normalized drain current IDS\/(W\/L) reaches 100 nA for VDS = 100 mV.\u00a0\n(1) Determine the subthreshold swing, S.\u00a0\n(2) If the normalized leakage current must be less than or equal to 10 pA when VGS\n= 0 V and VDS = 100 mV, what is the minimum threshold voltage this device can\u00a0\nhave?\u00a0\n(3) Why is a small value of S desirable?\n"}]}
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