Answer to Question #282109 in Electrical Engineering for MD HUMAYAN KABIR

Question

(3) The transfer characteristic of MOS transistor is the dependence of ( ). 

A. Drain voltage on gate-source voltage B. Drain voltage on drain-source voltage

C. Drain current on drain-source voltage D. Drain current on gate-source voltage

(4)The drain of an n-channel MOSFET is shorted to the gate so that VGS = VDS. The 

threshold voltage (VT) of the MOSFET is 1 V. If the drain current (ID) is 1 mA for 

VGS = 2 V, then for VGS = 3 V, ID is ( ). 

A. 2 mA B. 3 mA C. 9 mA

Answer 1

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