Answer to Question #136652 in Physics for rainy season

Question

Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy 𝐸𝑐 and the Fermi energy 𝐸𝐹.

Find an expression for 𝐸𝑐−𝐸𝐹, i.e, the difference between the conduction band edge

energy and the Fermi energy in terms of the donor concentration 𝑁𝐷.

Determine the concentration of donor impurity atoms that must be added to silicon so

that 𝐸𝑐−𝐸𝐹=0.2 𝑒𝑉.

Answer 1

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