Given,
Temperature (T)= 300K
Doping concentration (NA)=1016cm−3
Built in voltage (Vbi)=0.7V
Vbi=eKBTln(NpNn)
⇒Vbi=eKBTln(ni2NAND)
ni=1.5×1010cm−3 ,in the quasi-neutral p-region
Let the doping of n-type Si be (ND)=?
Now, substituting the values,
Vbi=eKBTln(ni2NAND)
Now, substituting the values,
⇒Vbi=eKBTln(ni2NAND)
⇒0.7V=1.6×10−191.4×10−23×300ln((1.5×1010)21016ND)
⇒0.7=0.026ln2.25×104ND
⇒26.92=ln2.25×104ND
⇒e26.92=2.25×104ND
⇒4.5×1011×2.25×104=ND
⇒ND=10.125×1015
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