Hello sir,
My question is about MOS-capacitor,
We know that, If we place +ve gate voltage on p-MOS capacitor holes are repelled from semiconductor-oxide interface leaving behind negative charge due to ionized acceptor ions,This results in a depletion region.
Now the question is, If we injected the required negative charges (electrons) into semiconductor from its back contact is the depletion region is going to vanish(neutralization)....??