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Answer to Question #32714 in Electric Circuits for rgrand
Question #32714
Hello sir,
My question is about MOS-capacitor,
We know that, If we place +ve gate voltage on p-MOS capacitor holes are repelled from semiconductor-oxide interface leaving behind negative charge due to ionized acceptor ions,This results in a depletion region.
Now the question is, If we injected the required negative charges (electrons) into semiconductor from its back contact is the depletion region is going to vanish(neutralization)....??
My question is about MOS-capacitor,
We know that, If we place +ve gate voltage on p-MOS capacitor holes are repelled from semiconductor-oxide interface leaving behind negative charge due to ionized acceptor ions,This results in a depletion region.
Now the question is, If we injected the required negative charges (electrons) into semiconductor from its back contact is the depletion region is going to vanish(neutralization)....??
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