Answer to Question #85165 in Mechanical Engineering for Matias

Question #85165
The p-type base of a crystalline silicon solar cell, 300μm wide, with an electron diffusion length of 400μm, has a perfectly passivated rear surface, with a zero surface recombination velocity. What is the probability that an electron generated near the back surface is collected at the junction ?
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Expert's answer
2019-02-18T05:46:53-0500
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