5.1 The electron and hole mobilities in a Si sample are 0.135 and 0.48m2/V-s respectively. Determine the conductivities of intrinsic Si at 300 K if the intrinsic carrier concentration is 1.5x106 atom/m3. The sample is then doped with 1023 phosphorus atom/m3. Determine the equilibrium hole concentration, conductivity, and position of the Fermi level relative to the intrinsic level.
5.2 Indicate on an energy level diagram the conduction and valence bands, donor and acceptor states and the position of Fermi level for
(i) an intrinsic semiconductor.
(ii) a n-type semiconductor.
(iii) a p-type semiconductor.