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{"ops":[{"attributes":{"bold":true},"insert":"Question 5"},{"insert":"\n\u00a05.1\u200b The electron and hole mobilities in a Si sample are 0.135 and 0.48m"},{"attributes":{"script":"super"},"insert":"2"},{"insert":"\/V-s respectively.\u00a0\u200bDetermine the conductivities of intrinsic Si at 300 K if the intrinsic carrier concentration is 1.5x10"},{"attributes":{"script":"super"},"insert":"6 "},{"insert":"atom\/m"},{"attributes":{"script":"super"},"insert":"3"},{"insert":". The sample is then doped with 10"},{"attributes":{"script":"super"},"insert":"23"},{"insert":"\u00a0phosphorus atom\/m"},{"attributes":{"script":"super"},"insert":"3"},{"insert":". Determine the equilibrium hole concentration,\u00a0conductivity,\u00a0and position of the Fermi level relative to the intrinsic level.\u200b\n\n5.2\u200b Indicate on an energy level diagram the conduction and valence bands, donor\u00a0and\u00a0acceptor states and the position of Fermi level for\n\t(i) an intrinsic semiconductor.\n\t(ii) a n-type semiconductor.\n\t(iii) a p-type semiconductor.\u200b\n"}]}

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