Question

Problem - A sample of gallium arsenide (GaAs) is doped with 1010 silicon atoms per cm3

.

Ninety-five percent of the silicon atoms replace arsenic atoms and the remaining five percent

replace gallium atoms. T = 300 K. The intrinsic carrier concentration, ni

, is equal to 9 × 106 cm3

.

Calculate the electron and hole concentration as well as the position of the Fermi level.

Answer 1

1)

$n_1=2\cdot 10^{16},$ $p_1=5\cdot 10^3,$

$n_2=10^{16},$ $p_2=10^4,$

2)

$n_1=8\cdot10^{15},$ $p_1=1.25\cdot 10^4,$

$n_2=10^{16},$ $p_2=10^4.$