Answer to Question #284887 in Electrical Engineering for H K

Question

3. Consider the NPN BJT made of silicon is in the forward active region, with IC = 10 

μA, doping concentrations NE = 1018 cm-3, NB = 1017 cm-3, and NC = 1016 cm-3; 

thicknesses WE = 0.5 μm, WB = 0.25 μm, and WC = 2 μm; and diffusion constants 

DpE = 2 cm2/s, DnB = 20 cm2/s, and DpC = 12 cm2/s, and Lnb = 1 μm. The 

cross-sectional area A = 1 μm2. Assume that recombination within the BJT is small 

(i.e., diffusion lengths are much larger than the thicknesses of each layer). 

Calculate the emitter injection efficiency γ, the base transport factor β*

, the common 

emitter current gain βdc, the common base current gain αdc, respectively.

Answer 1

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