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{"ops":[{"insert":"3. Consider the NPN BJT made of silicon is in the forward active region, with IC = 10\u00a0\n\u03bcA, doping concentrations NE = 1018 cm-3, NB = 1017 cm-3, and NC = 1016 cm-3;\u00a0\nthicknesses WE = 0.5 \u03bcm, WB = 0.25 \u03bcm, and WC = 2 \u03bcm; and diffusion constants\u00a0\nDpE = 2 cm2\/s, DnB = 20 cm2\/s, and DpC = 12 cm2\/s, and Lnb = 1 \u03bcm. The\u00a0\ncross-sectional area A = 1 \u03bcm2. Assume that recombination within the BJT is small\u00a0\n(i.e., diffusion lengths are much larger than the thicknesses of each layer).\u00a0\nCalculate the emitter injection efficiency \u03b3, the base transport factor \u03b2*\n, the common\u00a0\nemitter current gain \u03b2dc, the common base current gain \u03b1dc, respectively.\n"}]}
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