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{"ops":[{"insert":"\n(1) The minimum subthreshold swing of a MOSFET at T = 350 K is ( ).\u00a0\nA. 30 mV\/decade B. 60 mV\/decade C. 70 mV\/decade D. 90 mV\/decade\u00a0\n(2) Which of the following causes the drain current to increase with VDS in the\u00a0\nsaturation region? ( ).\u00a0\nA. channel length modulation B. inversion charge in the channel\u00a0\nC. the body effect D. mobility degradation\u00a0\n(3) A MOSFET is biased in the saturation region with a transconductance of gm = 10\u00a0\nmS in the absence of channel length modulation effects. What would the gm be if\u00a0\nthe CLM parameter was \u03bb = 0.02 V-1 for \u0394VDS = 3V? ( ).\u00a0\nA. 9.94 mS B. 10 mS C. 10.6 mS D. 0.6 mS\u00a0\n(4) At room temperature, a possible value for the mobility of electrons in the inversion\u00a0\nlayer of a silicon n-channel MOSFET is ( ).\u00a0\nA. 450 cm2\/V\ua78fs B. 1350 cm2\/V\ua78fs C. 1800 cm2\/V\ua78fs D. 3600 cm2\/V\ua78fs\u00a0\n\n\n"}]}
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