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{"ops":[{"insert":"(1) An NMOS transistor starts to conduct when the potential difference between \n( ) is higher than the threshold voltage VT.\nA. the drain and the source terminals B. the gate and the source terminals\nC. the gate and the drain terminals D. the drain and the base terminals\n(2) Which of the following is NOT true? ( ). \nA. QOX is a function of applied gate voltage. \nB. Threshold voltage is a function of tox. \nC. P+ Poly silicon gate is usually used for n-MOS capacitor. \nD. Once the strong inversion occurs, Qd (=the depletion charge) is approximately \nunchanged with VGS. \n\n"}]}
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