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Consider an ultrathin body n-channel MOSFET at 300 K with width

W = 50 μm, length L = 5 μm, body thickness = 20 nm, oxide thickness

h = 70 nm with dielectric constant κ=3.9, VT = 1 V and effective

mobility 800 cm2/Vs (assumed independent of gate voltage).

Calculate:

(a) Idsat if Vg = 2 V

(b) Ron when Vg = 2 V and Vd = 0 V

(c) gm when Vg = 2 V and Vd = 2 V