The energy gap separating valence band from conduction is 0.7 ev for a material.
The material is
Values of energy gaps (at 300K) from the table with semiconductor band gaps for Gallium antimonide (GaSb) and and Indium(III) nitride (InN) is equal to 0.7eV.
Answer: the material is Gallium antimonide (GaSb) or Indium(III) nitride (InN).