Answer to Question #202303 in Physics for Tulimeke

Question

The electron and hole mobilities in a Si sample are 0.135 and 0.48m2/V-s respectively.  Determine the conductivities of intrinsic Si at 300 K if the intrinsic carrier concentration is 1.5 x 106 atom/m3. The sample is then doped with 1023 phosphorus atom/m3. Determine the equilibrium hole concentration, conductivity, and position of the Fermi level relative to the intrinsic level. 

Answer 1

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