Question

Define the majority carrier concentration in an n-type Si semiconductor in terms of
the conduction band edge energy

Answer 1

The majority carrier concentration in an n-type Si semiconductor in terms of

the conduction band edge energy is

$$n_0=N_C\text{exp}\bigg(\frac{E_F-E_C}{kT}\bigg),\\\space\\ N_C=2\bigg(\frac{2M_C^*\pi k T}{h^2}\bigg).$$

$N_C$ is the effective density of states at the conduction band edge;

$M_C^*$ is the effective mass of electron in the conduction band.