Question

a) Consider a silicon p-n junction at T = 300 K with doping concentrations of NA = 10^16 cm-3 . Given that the built-in voltage Vbi = 0.7 V, determine the doping concentration of the n-side of the junction

Answer 1

Gives

T=300K

$N_A=10^{-16}cm^{-3}=10^{22}m^{-3}$

$N_n=?$

$V_{bi}=0.7V$

$N_n=N_Ae^\frac{V_{bi}e}{K_BT}$

Put value

$N_n=10^{22}e^\frac{0.7\times 1.6\times10^{-19}}{1.38\times10^{-23}\times300}$

$N_n=5.6\times10^{27}$ Cm^-3