Answer to Question #210595 in Optics for yesterday

Question #210595

a) Consider a silicon p-n junction at T = 300 K with doping concentrations of NA = 10^16 cm-3 . Given that the built-in voltage Vbi = 0.7 V, determine the doping concentration of the n-side of the junction


1
Expert's answer
2021-06-28T04:17:02-0400

Gives

T=300K

NA=1016cm3=1022m3N_A=10^{-16}cm^{-3}=10^{22}m^{-3}

Nn=?N_n=?

Vbi=0.7VV_{bi}=0.7V

Nn=NAeVbieKBTN_n=N_Ae^\frac{V_{bi}e}{K_BT}

Put value

Nn=1022e0.7×1.6×10191.38×1023×300N_n=10^{22}e^\frac{0.7\times 1.6\times10^{-19}}{1.38\times10^{-23}\times300}

Nn=5.6×1027N_n=5.6\times10^{27} Cm-3

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