a) Consider a silicon p-n junction at T = 300 K with doping concentrations of NA = 10^16 cm-3 . Given that the built-in voltage Vbi = 0.7 V, determine the doping concentration of the n-side of the junction
Gives
T=300K
NA=10−16cm−3=1022m−3N_A=10^{-16}cm^{-3}=10^{22}m^{-3}NA=10−16cm−3=1022m−3
Nn=?N_n=?Nn=?
Vbi=0.7VV_{bi}=0.7VVbi=0.7V
Nn=NAeVbieKBTN_n=N_Ae^\frac{V_{bi}e}{K_BT}Nn=NAeKBTVbie
Put value
Nn=1022e0.7×1.6×10−191.38×10−23×300N_n=10^{22}e^\frac{0.7\times 1.6\times10^{-19}}{1.38\times10^{-23}\times300}Nn=1022e1.38×10−23×3000.7×1.6×10−19
Nn=5.6×1027N_n=5.6\times10^{27}Nn=5.6×1027 Cm-3
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