The intrinsic temperature of a semiconductor is the temperatures at which the intrinsic
carrier concentration equals the impurity concentration. Find the intrinsic temperature for a
silicon sample doped with 1015 phosphorus atoms/cm3
.
n=(M1M2)32(T300)32⋅2.5⋅1019, ⟹ n=(\frac{M_1}{M_2})^{\frac 32}(\frac T{300})^\frac 32\cdot 2.5\cdot 10^{19},\impliesn=(M2M1)23(300T)23⋅2.5⋅1019,⟹
T=41 K.T=41~K .T=41 K.
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