Question

Calculate the location of Ei in silicon at liquid nitrogen temperature (77 K), at room

temperature (300 K), and at 100 °C (let mp =1.0 m0 and mn= 0.19 m0). Is it reasonable to assume

that Ei is in the center of the forbidden gap?

Answer 1

$E=\frac{kT}2\ln(\frac{m_p}{m_n}),$

a)

$E_1=88.2\cdot 10^{-23}~J,$

b)

$E_2=343.8\cdot 10^{-23}~J,$

c)

$E_3=427.4\cdot 10^{-23}~J.$