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1.
Question 1
Use this information to answer Question 1-3:
Consider a step pn junction made of silicon. The p- and n-sides are doped such that E_C - E_F = 0.21 eV on the n-side and E_F - E_V =0.18eV on the p-side. The pn junction is under zero bias and kept at T=300K.
Find the doping density in the n-side in unit of cm^-3
.
Answers within 5% error will be considered correct.
2.
Question 2
Find the doping density in the p-side in unit of cm^-3
.
Answers within 5% error will be considered correct.
3.
Question 3
Find the built-in potential in unit of V
Answers within 5% error will be considered correct.
Discussion about verification and interpretation of truth tables for digital logic gates.
Conclusion about verification and interpretation truth tables digital logic gates.
Assume a 4-bit shift register using D flip flop which will take one clock cycle for loading the data and 3 clock cycles for getting the output, Identify the type of shift register and describe its operation with a diagram
Design a mealy machine whose output is 1 only when input 1101 is detected otherwise output is 0 with overlapping allowed and not allowed conditions.
Design a synchronous counter by using T-flip-flop which can counter the sequence 0, 1,2,4,5,0….and rest states move to 0.
Design a Mod -5 asynchronous up counter using +ve edge triggering D flip flop
Differentiate between Ring Counter, Johnson Counter, Synchronous, and Asynchronous
Counter.
In conducting medium: H= y^2zax+2(x+1)yzay-(x+1)z^2az
(A/M).
find the current density J at (2,0,-1)
In conducting medium: H= y^2zax+2(x+1)yzay-(x+1)z^2az
(A/M).find the current density J at (2,0,-1)
