At what temperature the saturation current will be the twice of the diode current when the contact potential of the diode is x V. Assuming the diode is made by silicon material.
Diode current
Also can be written as
where:
I = the net current flowing through the diode;
I0 = Saturation current
V = applied voltage across the terminals of the diode= x volt (Given in question )
q = absolute value of electron charge;
k = Boltzmann's constant; and
T = absolute temperature (K).
as question says
I=2I(e qV/kT)
0.5= (e qV/kT)
T= - 1.45 (qx/k)
For constant q
T= - 1.45 *xK1
K1= a constant (q/k)
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