Answer to Question #283315 in Electrical Engineering for MD HUMAYAN KABIR

Question

(5) Threshold voltage of a short channel MOS transistor is smaller than the one of a

long channel MOS as ( ).

A. It occupies smaller area

B. The number of technological processes is small

C. Gate controls smaller number of charge

D. There are piled charges on the boundary of oxide-semiconductor junction

(6) The drain induced barrier lowering happens because of ( ).

A. High gate voltage in an NMOS device

B. High drain voltage that contributes in reducing the threshold voltage

C. The decrease in current in the channel due to high drain voltage

D. All of the above

Answer 1

(5) Threshold voltage of a short channel MOS transistor is smaller than the one of a

long channel MOS as ( ).

Correct Option: A. It occupies smaller area

(6) The drain induced barrier lowering happens because of ( ).

Correct Option: B. High drain voltage that contributes in reducing the threshold voltage