Question

The excess hole concentration within the quasi-neutral n-type region of a silicon p+n 

step junction of area A = 1mm × 1mm maintained at T = 300K is plotted on a linear 

scale below. The hole lifetime τp = 10-6 s. ni = 1010 cm-3.(1) Calculate the applied voltage, VA. 

(2) Calculate the minority-carrier charge stored in this diode, QP. 

(3) Calculate the diode current, I.

Answer 1

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