Answer to Question #268306 in Electrical Engineering for ASAP

Question

4.

Question 4

Use this information to answer Question 4-8:

Consider a step pn junction made of GaAs at T = 300 K. At zero bias, only 20% of the total depletion region width is in the p-side. The built-in potential ϕi =1.20V.

Determine the acceptor density in the p-side in unit of cm^-3.

Answers within 5% error will be considered correct.

5.

Question 5

Determine the donor density in the n-side in unit of cm^-3

Answers within 5% error will be considered correct.

6.

Question 6

Determine the depletion region width, x_n​, in the n-side in unit of μm.

Answers within 5% error will be considered correct.

7.

Question 7

Determine the depletion region width, x_p​, in the p-side in unit of μm.

Answers within 5% error will be considered correct.

8.

Question 8

Determine maximum electric field in unit of V/cm

Answers within 5% error will be considered correct.

Answer 1

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