Answer to Question #161913 in Electrical Engineering for Mital sosa

Question #161913

A one sided p

+

-n junction at 300K is doped with NA = 1019cm-3

. Design the

junction so that depletion capacitance is 0.85 pfd at Vr = 4V.


1
Expert's answer
2021-02-09T07:07:50-0500

w =7.9451x 10-5 cm


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