Answer to Question #161913 in Electrical Engineering for Mital sosa

Electrical Engineering

Question #161913

A one sided p

+

-n junction at 300K is doped with NA = 1019cm-3

. Design the

junction so that depletion capacitance is 0.85 pfd at Vr = 4V.

Expert's answer

w =7.9451x 10^-5 cm

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