Answer to Question #280641 in Chemistry for Alaa

Question

A silicon sample is doped with Nd = 1017cm–3 of As atoms. 

a) What are the electron and hole concentrations and the Fermi level position (relative to Ec or 

Ev) at 300 K? (Assume full ionization of impurities.) 

b) Check the full ionization assumption using the calculated Fermi level, (i.e., find the probability 

of donor states being occupied by electrons and therefore not ionized.) Assume that the 

donor level lies 50 meV below the conduction band, (i.e., Ec – ED = 50 meV.) 

Answer 1

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