Drive an expression for band structure of an open circuit PN junction. Consider the PN junction at 300K with doping concentration N d =2*10^ 15 cm^ -3 and N a =1.5*10^ 18 cm^ -3 in the P and N side of junction respectively. Determine the contact potential across the junction. Assume that intrinsic concentration of germanium is n i =2.5*10^ 13 cm^ -3 at 300K.
The space charge layer (SCL) extends on both the n and p side and the contact potential (eV0) is equal to the difference between the workfunctions of the p and n side (φp − φn).
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