When irradiating this system with light energy exceeding the band gap value (E>Eg, for Si the value of Eg comprises 1.1eV), the photogeneration of charge carriers (electrons and holes) takes place (at the p-n junction region). Electrons move towards the positive charge on the n-type Si whereas the holes move to the negative charge on the p-type Si. This separation of charges causes a current to flow across the junction.
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