Excess carriers are uniformly generated in a GaAs photoconductor at a rate of GL = 1021 cm-3-s-1. The area is A = 10-4 cm2 and the length is L = 100 μm. The other parameters are:
Nd=5×1016cm-3 Na=0
μn=8000cm2/V-s μp=250cm2/V-s
If a voltage of 5 volts is applied, calculate (a) the steady-state excess carrier concentration, (b) the photoconductivity, (c) the steady-state photocurrent, and (d) the photoconductor gain.
Comments
Leave a comment