Bipolar Junction Transistor (BJT) is a current controlled device as the collector's current is fully controlled by the base current.
The relationship between the current in the base, collector and emitter is given as
"I_e=I_b+I_c\\\\\nI_c=\\beta{I_b}\\\\\nI_c=\\alpha{I_e}"
Where "\\alpha" and "\\beta" are the gain of the Transistor in common emitter and common base mode respectively
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